師資
汪青博士,南方科技大學深港微電子學院研究教授、正高級研究員，博士生導師，深圳市高層次人才，深圳市第三代半導體材料和器件重點實驗室副主任，IEEE Senior member，IEEE EDS (Electron Devices Society) Power Devices and ICs 委員會委員，第三代半導體產業技術創新戰略聯盟標準化委員會委員，長期從事GaN材料和器件領域研究工作，主持國自然青年基金項目、廣東省自然科學基金青年提升項目、廣東省科技計劃項目、深圳市基礎研究重點項目和面上項目等，在IJEM、 Advanced Science、Device、IEEE EDL、ISPSD、APL等國際主流期刊/會議上共發表80多篇高水平學術論文，授權/申請國內發明專利50余項和PCT專利5項，參與制定1項國家標準、1項行業標準和2項團體標準。
教育經歷
1）2008.9-2013.6, 華南理工大學，材料物理與化學, 博士
2）2004.9-2008.6, 西南大學, 材料物理, 學士
工作經歷
1）2023.8-至今，南方科技大學，研究教授、研究員，博士生導師；
2）2019.4-2023.7，南方科技大學，研究副教授、副研究員，碩士生導師;
3）2013.7- 2019.1, 東莞市中鎵半導體科技有限公司, 歷任研發中心高級工程師、事業部副經理、研發部經理和制造部主任。
獲得獎項
1） 2022，獲得中國發明協會頒發的發明創業獎創新獎二等獎
2） 2021，深圳市高層次人才
3） 2021，南方科技大學“七一”表彰“優秀黨務工作者”
4） 2021，南方科技大學工學院“優秀共產黨員”稱號
5） 2019，獲得第三代半導體產業技術創新戰略聯盟“年度貢獻獎”
研究方向
GaN功率器件及單片集成電路
GaN射頻器件
GaN智能傳感系統
代表性論文
1、Yi Deng, Yi Zhang*, Xinyuan Zhang, Yang Jiang, Xi Chen, Yansong Yang, Xin Tong, Yao Cai, Wenjuan Liu, Chengliang Sun, Dashan Shang, Qing Wang*, Hongyu Yu*, Zhongrui Wang*.MEMS Oscillators-Network-Based Ising Machine with Grouping Method. Advanced Science. 2024, 2310096.
2、Yang Jiang, Dingchen Wang, Ning Lin, Shuhui Shi, Yi Zhang, Shaocong Wang, Xi Chen, Hegan Chen, Yinan Lin, Kam Chi Loong, Jia Chen, Yida Li, Renrui Fang, Dashan Shang*, Qing Wang*, Hongyu Yu* and Zhongrui Wang*. Spontaneous Threshold Lowering Neuron using Second-Order Diffusive Memristor for Self-Adaptive Spatial Attention, Advanced Science, 2023, 2301323.
3、Yang Jiang, Shuhui Shi, Shaocong Wang, Fangzhou Du, Peiran Wang, Ning Lin, Wennao Li, Yi Zhang, Leiwei He, Robert Sokolovskij, Jiaqi He, Mujun Li, Dingchen Wang, Xi Chen, Qing Wang*, Hongyu Yu*, and Zhongrui Wang*. In-sensor Reservoir Computing for Gas Pattern Recognition using Pt-AlGaN/GaN HEMTs, Device, 2025, 3(1).
4、Yi Zhang, Zilong Xiong, Lewei He, Yang Jiang, Chenkai Deng, Fangzhou Du, Kangyao Wen, Chuying Tang, Qiaoyu Hu, Mujun Li, Xiaohui Wang, Wenhui Wang, Han Wang, Qing Wang*, Hongyu Yu*, Zhongrui Wang*. Electrically Reconfigurable Surface Acoustic Wave Phase Shifters Based on ZnO TFTs on LiNbO3 Substrate. International Journal of Extreme Manufacturing, 2025, 7(3): 035504.
5、Chu-Ying Tang, Hong-Hao Lu, Ze-Peng Qiao, Yang Jiang, Fang-Zhou Du, Jia-Qi He, Yu-Long Jiang*, Qing Wang*, and Hong-Yu Yu*, Ohmic Contact with a Contact Resistivity of 12 Ω·mm on p-GaN/AlGaN/GaN, IEEE Electron Device Letters, 2022.
6、ChuYing Tang, ChengKai Deng, Chun Fu, Jiaqi He, Fangzhou Du, Peiran Wang, Kangyao Wen,Yi Zhang, Yang Jiang, Nick Tao, Wenyue Yu, Qing Wang*, and HongYu Yu*. Low Contact Resistivity of< 10Ω· mm for Au-Free Ohmic Contact on p-GaN/AlGaN/GaN[J]. IEEE Electron Device Letters, 2024.
7、Yang Jiang, Wenmao Li, Fangzhou Du, Robert Sokolovskij, Yi Zhang, Shuhui Shi, Weiguo Huang, Qing Wang,* Hongyu Yu* and Zhongrui Wang*. Comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses, Journal of Materials Chemistry C, 2023,11, 10121-10148.
8、Yang Jiang, Fangzhou Du, Kangyao Wen, Jiaqi He, Mujun Li, Chuying Tang, Yi Zhang, Zhongrui Wang*, Qing Wang*, Hongyu Yu*.High VTH and Breakdown Enhancement-Mode GaN HEMTs for Power ICs Application Using Charge Trapping Layer. International Symposium On Power Semiconductor Devices And Ics (ISPSD), 2024.
9、Fangzhou Du, Yang Jiang, Peiran Wang, Kangyao Wen, Chuying Tang, Jiaqi He, Chenkai Deng, Yi Zhang, Mujun Li, Xiaohui Wang, Qiaoyu Hu, Wenyue Yu, Qing Wang*, HongYu Yu*. Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment[J]. Applied Physics Letters, 2025, 126(1).
10、Yang Jiang, FangZhou Du, KangYao Wen, JiaQi He, PeiRan Wang, MuJun Li, ChuYing Tang, Yi Zhang, ZhongRui Wang*, Qing Wang*, HongYu Yu*. Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters[J]. Applied Physics Letters, 2024, 124(24).
6. Chuying Tang, Chun Fu, Yang Jiang, Minghao He, Chenkai Deng, Kangyao Wen, Jiaqi He, Peiran Wang, Fangzhou Du, Yi Zhang, Qiaoyu Hu, Nick Tao, Qing Wang*, HongYu Yu*. Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity. Applied Physics Letters. 28 August 2023; 123 (9): 092104.
7. Chu-Ying Tang, Hong-Hao Lu, Ze-Peng Qiao, Yang Jiang, Fang-Zhou Du, Jia-Qi He, Yu-Long Jiang*, Qing Wang*, and Hong-Yu Yu*, Ohmic Contact with a Contact Resistivity of 12 Ω·mm on p-GaN/AlGaN/GaN, IEEE Electron Device Letters, 2022, 43(9): 1412–1415.
8. Yang Jiang, Dingchen Wang, Ning Lin, Shuhui Shi, Yi Zhang, Shaocong Wang, Xi Chen, Hegan Chen, Yinan Lin, Kam Chi Loong, Jia Chen, Yida Li, Renrui Fang, Dashan Shang*, Qing Wang*, Hongyu Yu* and Zhongrui Wang*. Spontaneous Threshold Lowering Neuron using Second-Order Diffusive Memristor for Self-Adaptive Spatial Attention, Advanced Science, 2023, 2301323.
9. Yang Jiang, Wenmao Li, Fangzhou Du, Robert Sokolovskij, Yi Zhang, Shuhui Shi, Weiguo Huang, Qing Wang,* Hongyu Yu* and Zhongrui Wang*. Comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses, Journal of Materials Chemistry C, 2023,11, 10121-10148
10. Chuying Tang, Chun Fu, Yang Jiang, Minghao He, Chenkai Deng, Kangyao Wen; Jiaqi He, Peiran Wang, Fangzhou Du, Yi Zhang, Qiaoyu Hu; Nick Tao; Qing Wang* and HongYu Yu*，" Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity". Applied Physics Letters， Vol.123, Issue 9, 092104 (2023).
11. Jiaqi He, Kangyao Wen, Peiean Wang, Minghao He, Fangzhou Du, Yang Jiang, Chuying Tang, Nick Tao, Qing Wang*, Gang Li*, and Hongyu Yu*, Interface charge engineering on an in-situ SiNx/AlGaN/GaN platform for normally-off GaN MIS-HEMTs with improved breakdown performance, Applied Physics Letters (2023), 4 September 2023; 123 (10): 103502.
12. Minghao He ; Kangyao Wen; Chenkai Deng; Mujun Li; Yifan Cui; Qing Wang* ; Hongyu Yu*; Kah-Wee Ang*; "Charge Trapping Layer Enabled Normally-Off β-Ga2O3 MOSFET," in IEEE Transactions on Electron Devices, vol. 70, no. 6, pp. 3191-3195, June 2023.
13. Chenkai Deng, Wei-Chih Cheng, XiGuang Chen, KangYao Wen, MingHao He, ChuYing Tang, Peiran Wang, Qing Wang*, HongYu Yu*; Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation. Applied Physics Letters. 5 June 2023; 122 (23): 232107.
14. Honghao Lu, Kangyao Wen, Fangzhou Du, Chuying Tang, Wei-Chih Cheng, Bowen Wei, Honglin Li, Qing Wang*, Hongyu Yu*. "Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering", Materials Science in Semiconductor Processing, 154(2023): 107221
15. Yang Jiang, FangZhou Du, JiaQi He, ZePeng Qiao, ChuYing Tang, XinYi Tang, ZhongRui Wang, Qing Wang*, HongYu Yu*，"Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance". Applied Physics Letters. 121, 212105 (2022)
16. Fangzhou Du, Yang Jiang, Zepeng Qiao, Zhanxia Wu, Chuying Tang, Jiaqi He, Guangnan Zhou, Wei-Chih Cheng, Xinyi Tang, Qing Wang*, and Hongyu Yu*. “Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer.” Materials Science in Semiconductor Processing: 143, 2022.
17. Wei-Chih Cheng; Fanming Zeng; Minghao He; Qing Wang*; Mansun Chan; Hongyu Yu*. (2020). Quasi-Normally-Off AlGaN/GaN HEMTs with SiNx Stress Liner and Comb Gate for Power Electronics Applications. IEEE Journal Of The Electron Devices Society,8, 1138-1144.